Ultradeep electron cyclotron resonance plasma etching of GaN

Spectroscopic ellipsometric monitoring of electron cyclotron resonance plasma etching of GaAs and AlGaAs

Spectroscopic ellipsometric monitoring of electron cyclotron resonance plasma etching of GaAs and AlGaAs" (1995). Faculty Publications from the Department of Electrical and Computer Engineering. 73. In situ real time spectroscopic ellipsometry measurements were made during electron cyclotron resonance plasma etching of radio frequency biased GaAs and AlGaAs samples. Gas mixtures used were CH 4 ...

TE 01 Excitation of an Electron Cyclotron Resonance Plasma Source

The uniformity of plasma generation in electron cyclotron resonance (ECR) reactors for materials processing, and the subsequent uniformity of fluxes to the substrate, are generally a function of the mode of the microwave radiation injected into the chamber. In this paper, a finite difference time domain (FDTD) simulation is used to demonstrate the consequences of exciting an ECR reactor using a...

Plasma expansion from a dielectric electron cyclotron resonance source

The boundary conditions in an electron cyclotron resonance (ECR) source have been modified to mimic the operating conditions where current-free double-layers (DLs) have been recently measured in rf helicon plasmas. The plasma is heated or generated by the ECR at 875 G inside a dielectric source tube, and expands into a grounded diffusion chamber (terminated by a glass plate) by a rapidly decrea...

Electron Cyclotron Resonance Ion Source

Electron Cyclotron Resonance Ion Source